Semiconductor nanowires (NWs) have become the heart of a variety of nano-size devices in electronic and opto-electronic applications. They also offer a promising platform for fundamental research in low dimension condensed matter physics. Recent examples are hybrid heterostructure devices combining a superconducting metal with a III-V semiconductor NW baring large spin-orbit coupling and Lande - g factor, namely InAs or InSb NWs. [1] The growing interest is associated with theoretical predictions for the emergence of Majorana fermions (MFs) in such systems,[2] has been further encouraged by the recent experimental results.[3, 4] The MFs predicted non-abelian exchange statistics, can only be tested by interchanging MFs in NW networks.[5]

In this study, we demonstrate the growth of InAs NWs intersections on (001) oriented InAs by gold assisted VLS-MBE. The intersections are formed after merging by two different scenarios of either tip-to-tip or tip-to-side. The crystal structure change from wurtzite to zinc-blende at the intersection and back to wurtzite over a single monolayer was typical of all merging scenarios. We performed preliminary conductance measurements, which demonstrate that the unavoidable structure changes at the junctions do not impose a significant potential barrier.

[1] Wilczek, F. Nature Phys., 5, 614-618, (2009)

[2] Lutchyn, R. M.; Sau, J. D.; Sarma, S. D. Phys. Rev. Lett., 105, 77001, (2010)

[3] Mourik, V.; Zuo,K.; Frolov, S. M.; Plissard, S. R.; Bakkers, E. P. A. M.; Kouwenhoven, L. P. Science, 336, 1003-1007, (2012)

[4] Das, A. ; Ronen, Y. ; Most, Y. ; Oreg, Y. ; Heiblum, M. ; Shtrikman, H. Nature Phys., 8, 887-895, (2012)

[5] Alicea, J.; Oreg, Y.; Refael, G.; Oppen, F. V.; Fisher, M. P. A. Nat. Phys., 7, 412-417, (2011)